| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,259 pcs
|
1259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
440 pcs
|
440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS61WV25616EDBLL-10TLI is a 4Mbit (256K x 16) Asynchronous SRAM from Integrated Silicon Solution. It features a maximum access time of 10 ns and a write cycle time of 10 ns, ensuring high-speed performance for data buffering and caching applications. The device operates over a voltage range of 2.4V to 3.6V, providing flexibility for low-power designs.
With typical active power consumption of 85 mW and standby power of 7 mW, this SRAM is suitable for battery-powered and energy-efficient systems. It includes integrated Error Detection and Error Correction (ECC) for enhanced data integrity. The memory is organized as 256K x 16 bits with a parallel interface.
The part is housed in a 44-TSOP II package (0.400", 10.16mm Width) with surface mount mounting. It operates over an industrial temperature range of -40°C to 85°C (TA), making it suitable for harsh environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.4V to 3.6V
44-TSOP II (0.400", 10.16mm Width)
-40°C to 85°C (TA)
256K x 16
10 ns maximum
Yes, it includes Error Detection and Error Correction (ECC).
7 mW typical