| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,512 pcs
|
1512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The ISSI IS61WV20488BLL-10TLI is a 2M-word by 8-bit CMOS static RAM designed for high-speed performance and low power consumption. Fabricated using ISSI's high-performance CMOS technology, this device offers fast access times, with this specific model rated at 10 ns. It operates from a single power supply ranging from 2.4V to 3.6V, making it suitable for a variety of applications.
This fully static RAM requires no clock or refresh cycles, simplifying system design. Inputs and outputs are TTL-compatible. The device is available in a 44-pin TSOP Type II package, designed for surface mounting. It also supports industrial and automotive temperature ranges, and lead-free options are available.
The IS61WV20488BLL-10TLI is ideal for applications requiring fast data access and storage. Its low power consumption in standby mode, achieved when Chip Enable (CE) is HIGH, further enhances its suitability for power-sensitive designs. The memory organization is 2M x 8, providing a total capacity of 16Mbit.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.4V to 3.6V.
The package is 44-TSOP II (Type II) surface mount.
The operating temperature range is -40°C to +85°C (TA).
The memory size is 16Mbit organized as 2M x 8 bits.
The access time is 10ns at 2.4V-3.6V, with a faster 8ns option at 3.3V+5%.
The memory interface is parallel.