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120 pcs
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120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Silicon Solution IS61NLP25636A-200B3LI is a high-speed, low-power synchronous static RAM designed for networking and communications applications. This device offers a memory size of 9Mbit, organized as 256K words by 36 bits, with a fast clock frequency of 200 MHz and an access time of 3.1 ns.
This SRAM utilizes synchronous technology with SDR (Single Data Rate) operation, featuring a single R/W control pin and clock-controlled registered address, data, and control inputs. It supports no wait cycles between read and write operations, enhancing bus utilization. The device includes three chip enables for simple depth expansion and address pipelining, along with a power-down mode for power efficiency.
The IS61NLP25636A-200B3LI is available in a 165-TFBGA package, suitable for surface mount applications. It operates within a voltage range of 3.135V to 3.465V and has an operating temperature range of -40°C to 85°C (TA). The product also supports JTAG boundary scan for PBGA packages and is available in an industrial temperature grade.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 9Mbit.
The clock frequency is 200 MHz.
The access time is 3.1 ns.
The operating voltage range is 3.135V to 3.465V.
The operating temperature range is -40°C to 85°C (TA).
It is in a 165-TFBGA package.
Yes, it supports no wait cycles between read and write operations.