| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,719 pcs
|
2719 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
173 pcs
|
173 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The IS61NLP102418-200B3LI is a synchronous SRAM (Static Random Access Memory) device from Integrated Silicon Solution (ISSI). It offers a memory density of 18Mbit organized as 1M words by 18 bits. The memory operates at a clock frequency of 200MHz with a fast access time of 3.1ns, making it suitable for high-speed data buffering and cache applications.
The device uses a parallel memory interface and operates from a supply voltage range of 3.135V to 3.465V. It is designed for surface mount assembly and is packaged in a 165-ball TFBGA (Thin Fine-Pitch Ball Grid Array) with dimensions of 13x15mm. The operating temperature range is -40°C to 85°C (TA), supporting industrial temperature environments.
The SRAM is volatile and synchronous with single data rate (SDR) operation. The memory type is SRAM, and it is classified as volatile memory. The part is supplied in a standard FBGA-165 package with a supplier device package designation of 165-TFBGA (13x15).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.135V to 3.465V.
Surface mount 165-TFBGA (13x15mm) package.
-40°C to 85°C (TA).
18Mbit.
200MHz.
3.1ns.
1M x 18.