K6R1016V1CTC10
Samsung Electronics
The Samsung Electronics K6R1016V1CTC10 is a 1Mb SRAM memory integrated circuit. It features a fast 10ns access time.
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS61LV3216L-12K is a high-performance, low voltage CMOS static RAM (SRAM) manufactured by Integrated Silicon Solution (ISSI). This component features a memory organization of 32K words by 16 bits, providing a total storage capacity suitable for various embedded applications.
Designed for low voltage operation, the IS61LV3216L-12K is ideal for power-sensitive designs. Its static RAM architecture ensures fast data access without the need for external clock signals for data retention. The device is typically supplied in a surface-mount TSOP package, facilitating integration into compact electronic assemblies.
This SRAM is well-suited for applications requiring reliable and fast memory storage, such as in portable devices, industrial control systems, and consumer electronics where space and power efficiency are critical design considerations.
| Qty | Low | High |
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| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IS61LV3216L-12K has a memory organization of 32K x 16.
The IS61LV3216L-12K is a Low Voltage CMOS Static RAM (SRAM).
The IS61LV3216L-12K is available in a TSOP package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.