| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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323 pcs
|
323 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
137 pcs
|
137 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Silicon Solution IS61LPS25636A-200B3LI is a high-speed, low-power synchronous static RAM designed for communication and networking applications. This device is organized as 262,144 words by 36 bits, providing a total memory size of 9Mbit.
Key electrical specifications include a clock frequency of 200 MHz and an access time of 3.1 ns. It operates within a voltage range of 3.135V to 3.465V. The technology employed is SRAM - Synchronous, SDR.
This component features individual byte write control and global write capabilities, along with a self-timed write cycle. It supports burst sequence control using the MODE input and offers three chip enable options for depth expansion and address pipelining. The device is fabricated using advanced CMOS technology.
The IS61LPS25636A-200B3LI is available in a 165-TFBGA package and supports surface mount technology. Its operating temperature range is -40°C to 85°C (TA).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
9Mbit.
256K x 36.
200 MHz.
3.1 ns.
3.135V to 3.465V.
-40°C to 85°C.
165-TFBGA (13x15).