| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This 18Mb synchronous SRAM, part number IS61LF102418B-7.5TQLI from Integrated Silicon Solution, is designed for high-performance memory applications. It offers a parallel interface and operates at a clock frequency of 117 MHz with a fast access time of 7.5 ns.
The device supports a voltage range of 3.135V to 3.465V and operates within a temperature range of -40°C to 85°C. It features individual byte write control, global write capability, and burst sequence control via the MODE input. The SRAM is housed in a 100-LQFP package and is suitable for surface mounting.
Key features include auto power-down during deselect, single cycle deselect, and a snooze mode for reduced-power standby. The memory organization is 1M x 18 bits, providing ample storage for demanding applications in communication and networking.
This SRAM is fabricated using advanced CMOS technology, integrating a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs. All synchronous inputs are registered and controlled by a positive-edge-triggered single clock input.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 18Mbit.
The clock frequency is 117 MHz.
The access time is 7.5 ns.
The operating voltage range is 3.135V to 3.465V.
The operating temperature range is -40°C to 85°C (TA).
It is in a 100-LQFP package.
Yes, it is RoHS3 Compliant.