IS61C6416AL-12TLI The IS61C6416AL-12TLI is a 1Mbit static RAM from Integrated Silicon Solution, featuring a 12ns access time and operating from a 5V supply. It is packaged in a 44-TSOP II.
Mfr Part #:

IS61C6416AL-12TLI

Available from 2 distributors
Mfr Name: Integrated Silicon Solution
Integrated Silicon Solution
The IS61C6416AL-12TLI is a 1Mbit static RAM from Integrated Silicon Solution, featuring a 12ns access time and operating from a 5V supply. It is packaged in a 44-TSOP II.
✓ Total Stock: 5,445 pcs
$ Price Range: $1.28

IS61C6416AL-12TLI Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,415 pcs
5415 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
30 pcs
30 pcs On Request 1 On Request On Request On Request On Request On Request

IS61C6416AL-12TLI Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
Write Cycle Time

IS61C6416AL-12TLI Description

Short technical summary and product information.

The Integrated Silicon Solution IS61C6416AL-12TLI is a high-speed 1,048,576-bit static RAM organized as 65,536 words by 16 bits. Fabricated using high-performance CMOS technology, it offers access times as fast as 12 ns with low power consumption.

 

This asynchronous SRAM operates from a single 5V ± 10% power supply and is fully static, requiring no clock or refresh cycles. It features TTL compatible interface levels and is available in a 44-pin TSOP (Type II) package, suitable for surface mounting.

 

Key electrical characteristics include low active power consumption of 175 mW typical and low standby power of 1 mW typical. The device supports easy memory expansion through Chip Enable (CE) and Output Enable (OE) inputs, with Write Enable (WE) controlling read/write operations. Upper Byte (UB) and Lower Byte (LB) access are also supported.

 

The IS61C6416AL-12TLI is designed for applications requiring fast, reliable memory access. Its robust design and standard packaging make it a versatile component for various electronic systems.

IS61C6416AL-12TLI Quick Information

Product Type: SRAM
Canonical Name: IS61C6416AL-12TLI 1Mbit Asynchronous SRAM
Subcategory: Static RAM

IS61C6416AL-12TLI Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IS61C6416AL-12TLI Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

IS61C6416AL-12TLI Features

  • High-speed 1Mbit asynchronous SRAM.
  • Fast 12ns minimum access time.
  • Single 5V ± 10% power supply.
  • Fully static operation, no refresh needed.
  • 44-TSOP (Type II) surface mount package.

IS61C6416AL-12TLI Applications

  • Suitable for high-speed data storage.
  • Used in embedded system memory expansion.
  • Ideal for applications requiring fast access.
  • General purpose memory applications.

IS61C6416AL-12TLI FAQs

7 frequently asked questions generated from this part’s specifications.
What is the access time of the IS61C6416AL-12TLI?

The minimum access time is 12 ns.

What is the operating voltage range?

The nominal operating voltage is 5V with a tolerance of ±10% (4.5V to 5.5V).

What is the operating temperature range?

The operating temperature range is -40°C to 85°C.

What package type is the IS61C6416AL-12TLI available in?

It is available in a 44-TSOP II surface mount package (0.400 inch, 10.16 mm width).

What is the memory organization of this SRAM?

The memory is organized as 64K words by 16 bits.

What is the typical active power consumption?

Typical active power consumption is 175 mW.

What is the typical standby power consumption?

Typical standby power consumption is 1 mW.

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