IS49RL18320-125EBL

The IS49RL18320-125EBL is a 576Mbit RLDRAM 3 (Reduced Latency DRAM) memory device manufactured by Integrated Silicon Solution (ISSI). It is a volatile memory type with a parallel interface, designed for high-speed data processing applications. The device offers a clock frequency of 800 MHz with a maximum DDR operation frequency of 1066 MHz, and an access time rated at 10 ns (with 12 ns variant). Memory organization is available as 32M x 18 or 16 Meg x 36 configurations.

Operating from a supply voltage range of 1.28V to 1.42V, this RLDRAM 3 is suitable for low-power, high-performance designs. The part is housed in a 168-ball FBGA (Fine-pitch Ball Grid Array) package, which provides a compact footprint for space-constrained PCB layouts. The package is surface-mount, enabling efficient assembly in high-volume manufacturing.

Typical applications include networking equipment, telecommunications, and high-performance computing where low latency and high bandwidth are critical. The RLDRAM 3 architecture is optimized for reduced latency compared to standard DDR3 DRAM, making it ideal for buffer and cache memory functions. The device supports both 800 MHz and 1066 MHz clock rates, allowing flexibility in system design.