| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,881 pcs
|
1881 pcs | On Request | 1 | On Request | On Request | 1642+ | On Request | On Request |
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The IS46TR16640B-125JBLA1 is a 1 Gigabit DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) manufactured by Integrated Silicon Solution. This component offers a memory organization of 64M x 16 and operates with a standard voltage of 1.5V, with a specified range of 1.425V to 1.575V. It supports high-speed data transfer rates with a system frequency up to 1066 MHz and a nominal clock frequency of 800 MHz.
Key features include 8 internal banks for concurrent operation, an 8n-bit pre-fetch architecture, and programmable CAS Latency options. The device supports Auto Self Refresh (ASR) and Self Refresh Temperature (SRT) functionalities. It is housed in a 96-TWBGA (9mm x 13mm) package, suitable for surface mounting.
With an operating temperature range of -40°C to 95°C (TC), this DDR3 SDRAM is designed for various applications requiring reliable memory performance. The memory interface is parallel, and the memory type is volatile DRAM.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 1.5V, with a low voltage option of 1.35V.
Available in 96-TWBGA and 96-TFBGA packages, specifically a 96-ball BGA measuring 9mm x 13mm.
The device supports industrial temperature range of -40°C to +95°C, and automotive grade up to 105°C.
The memory size is 1Gbit organized as 64M words x 16 bits.
The maximum clock frequency is 1066 MHz with system frequency up to 1066 MHz; nominal clock is 800 MHz.
The access time is 20 ns.
CAS latency varies by speed grade: DDR3-1333G has CL 8, DDR3-1866M has CL 13.