IS46DR16320C-3DBLA1-TR

This IS46DR16320C-3DBLA1-TR is a 512Mbit DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) integrated circuit manufactured by Integrated Silicon Solution. It utilizes a double data rate interface, enabling two data transfers per clock cycle for high-speed operation.

The device operates with a supply voltage range of 1.7V to 1.9V and a clock frequency of 333 MHz. Key specifications include an access time of 450 ps and a write cycle time of 15ns. It supports programmable CAS latency options from 3 to 6 and programmable additive latency from 0 to 5. The memory organization is 32M x 16, with 4 internal banks for concurrent operation.

Packaged in an 84-TWBGA, this component is designed for surface mount applications. It operates within a temperature range of -40°C to 85°C (ambient). The datasheet indicates support for JEDEC standard 1.8V I/O, a 4-bit prefetch architecture, and on-chip DLL for aligning data strobe transitions with the clock.

This DDR2 DRAM is suitable for various memory applications requiring high bandwidth and efficient data transfer. Its features make it a component for systems needing fast and reliable memory solutions.