| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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210 pcs
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210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS43TR85120A-093NBLI is a high-density, volatile DRAM memory integrated circuit manufactured by Integrated Silicon Solution. This component offers a substantial 4Gbit memory size, organized as 512M x 8 bits, utilizing DDR3 SDRAM technology.
Key electrical specifications include a clock frequency of 1.066 GHz, an access time of 20 ns, and a write cycle time of 15 ns. It operates within a supply voltage range of 1.425V to 1.575V. The device is designed for surface mounting and comes in a compact 78-TWBGA (9x10.5mm) package.
With an operating temperature range of -40°C to 95°C (TC), this memory IC is suitable for applications requiring robust performance under varying thermal conditions. It adheres to RoHS3 compliance standards and has an MSL rating of 1 Unlimited, indicating its suitability for standard handling and storage.
This parallel interface DRAM is ideal for embedded systems and applications demanding high-speed, high-capacity volatile memory. Its specifications make it a suitable choice for various industrial and automotive-grade applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4 Gbit.
512M x 8.
Parallel.
1.066 GHz.
1.425V to 1.575V.
-40°C to 95°C (TC).
78-TWBGA (9x10.5mm) surface-mount package.