| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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720 pcs
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720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
501 pcs
|
501 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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This 1Gbit DDR3 SDRAM, part number IS43TR16640C-125JBLI from Integrated Silicon Solution, offers high-speed data transfer rates with a system frequency up to 1066 MHz. It features a standard operating voltage of 1.5V ± 0.075V and a low voltage option of 1.35V. The memory is organized as 64M x 16 and has an access time of 20 ns.
Designed for surface mounting, the component utilizes a 96-TFBGA package. Key features include 8 internal banks for concurrent operation, programmable CAS Latency, and Auto Self Refresh (ASR). The operating temperature range is -40°C to 95°C (TC).
This device supports various speed bins, including 125J (DDR3-1600J), 107M (DDR3-1866M), and 093N (DDR3-2133N), offering flexibility for different system requirements. It also supports features like Programmable Additive Latency and Dynamic ODT.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Nominal operating voltage is 1.5V; low-voltage operation is supported at 1.35V, backward compatible to 1.5V.
96-lead TFBGA and 96-ball TWBGA (9mm x 13mm or 7.5mm x 13mm) surface-mount packages; 78-ball BGA for x8 configurations.
Standard range is -40°C to 95°C; automotive A3 grade from -40°C to 125°C.
Speed bin 125J, corresponding to DDR3-1600J with CL-nRCD-nRP 10-10-10.
7.8 µs for Tc up to 85°C, 3.9 µs for 85-105°C, 1.95 µs for 105-115°C, 0.97 µs for 115-125°C.