| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS43TR16256BL-107MBLI-TR is a 4 Gigabit DDR3 Low Voltage (DDR3L) Synchronous Dynamic Random-Access Memory (SDRAM) manufactured by Integrated Silicon Solution, Inc. This component is designed for high-speed data transfer rates with system frequencies up to 1066 MHz.
Key electrical specifications include a standard operating voltage of 1.5V ±0.075V and a low voltage option of 1.35V +0.1V, -0.067V, which is backward compatible to 1.5V. It supports programmable CAS Latency, Additive Latency, and CAS WRITE latency. The memory features 8 internal banks for concurrent operation and an 8n-Bit pre-fetch architecture. It offers programmable burst lengths of 4 and 8, with sequential or interleave burst sequences.
This SDRAM operates within a temperature range of -40°C to +95°C (TC) and is available in a 96-ball BGA (9mm x 13mm) green package, specifically a 96-TFBGA. It supports features such as Auto Self Refresh (ASR), Self Refresh Temperature (SRT), and Dynamic On-Die Termination (ODT). The part number IS43TR16256BL-107MBLI-TR indicates a speed bin of 107M, corresponding to a JEDEC speed grade of DDR3-1866M with CL-nRCD-nRP timings of 13-13-13.
Additional features include TDQS support for x8 configurations, OCD (Off-Chip Driver Impedance Adjustment), and Write Leveling. The memory interface is parallel, with a memory size of 4Gbit and organization of 256M x 16. The access time is 20 ns, and the write cycle time is 15 ns, with a clock frequency of 933 MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 1.35V, with backward compatibility to 1.5V.
The device is available in a 96-TFBGA package, also identified as 96-TWBGA (9x13), for surface-mount assembly.
Supported temperature grades include 0°C to +95°C, -40°C to +95°C, -40°C to +105°C, -40°C to +115°C, and -40°C to +125°C.
The 4Gbit device is available in 256M x 16 and 512M x 8 configurations.
The device supports JEDEC DDR3-1600K, DDR3-1866M, and DDR3-2133N speed grades; the -107M option is rated DDR3-1866M at CL 13-13-13.
The device supports system frequency up to 1066 MHz.
It includes 8 internal banks, 8n-bit prefetch, burst lengths of 4 and 8, auto self refresh, partial array self refresh, write leveling, dynamic ODT, and an asynchronous RESET pin.