| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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442 pcs
|
442 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
442 pcs
|
442 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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This Integrated Silicon Solution IS43TR16128AL-125KBL is a 2Gb DDR3L SDRAM memory integrated circuit. It utilizes a parallel interface and operates with a clock frequency of 800 MHz, offering a fast data transfer rate.
The device provides a memory size of 2Gb, organized as 128M x 16 bits. Key electrical specifications include an access time of 20 ns and a write cycle time of 15 ns. The operating voltage range is between 1.283V and 1.45V, with a standard voltage option of 1.5V ± 0.075V and a low voltage option compatible with 1.35V.
Designed for surface mounting, the component comes in a 96-TFBGA package, specifically a 96-TWBGA (9x13) supplier device package. The operating temperature range for this device is 0°C to 95°C (TC).
Additional features include programmable CAS Latency, Additive Latency, CAS WRITE latency, and Burst Length. It supports Auto Self Refresh (ASR), Self Refresh Temperature (SRT), and Partial Array Self Refresh. The device also supports TDQS (Termination Data Strobe) for x8 configurations, OCD (Off-Chip Driver Impedance Adjustment), and Dynamic ODT (On-Die Termination).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2 Gb (gigabit).
1.5V nominal, with tolerance of ±0.075V.
800 MHz.
96-TFBGA (96-TWBGA 9x13).
0°C to 95°C (TC).
128M x 16.
DDR3-1600K with 11-11-11 timing.