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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Silicon Solution IS43R16160D-6BLI is a 256Mbit Double Data Rate (DDR) Synchronous Dynamic Random-Access Memory (SDRAM) component. It utilizes a pipeline architecture for high-speed data transfer, achieving two data word accesses per clock cycle.
Key electrical specifications include a nominal operating voltage of 2.5V (±0.2V) and a clock frequency of 166 MHz. The memory interface is parallel, with a memory organization of 16M x 16. It supports various burst lengths (2, 4, and 8) and burst types (Sequential and Interleave), along with programmable CAS latency options of 2, 2.5, and 3.
This device is available in a 60-TFBGA package and is designed for surface mount applications. It operates within a temperature range of -40°C to +85°C. The component also features auto refresh and self-refresh modes, as well as auto precharge functionality.
It is compatible with SSTL_2 I/O standards and includes bidirectional data strobe (DQS) for data capture. The memory array is internally organized into four banks for concurrent operations, enhancing performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 2.5V with a range of 2.3V to 2.7V.
It is available in a 60-ball TFBGA (8x13mm) surface mount package.
The device operates over an industrial temperature range of -40°C to +85°C.
256 Mbit (16M x 16).
166 MHz.
Programmable CAS latency of 2, 2.5, and 3.
SSTL_2 compatible I/O.