IS43R16160B-6TL

The IS43R16160B-6TL is a 256Mb DDR Synchronous DRAM manufactured by Integrated Silicon Solution. This volatile memory component features a double data rate architecture, enabling two data transfers per clock cycle. It operates with a voltage range of 2.3V to 2.7V and supports clock frequencies up to 166 MHz, with a CAS Latency of 3 providing a minimum clock frequency of 200 MHz and a maximum clock cycle time of 5 ns.

The memory organization is 16M x 16 bits, and it offers a fast access time of 700 ps from the clock. The operating temperature range is 0°C to 70°C (TA). This DRAM is supplied in a 66-TSOP II package, suitable for surface mount applications.

Key features include a bidirectional data strobe (DQS), differential clock input, and a DLL that aligns DQ and DQS transitions with CLK. It supports 4-bank operation, programmable CAS latency, burst length, and burst type. Auto precharge and all bank precharge are controlled by A10. The component also supports auto refresh and self-refresh cycles with 8192 refresh cycles per 64ms.

This component is designed for applications requiring high-speed data storage and retrieval. Its DDR technology and fast timing parameters make it suitable for various computing and embedded systems.