| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
302 pcs
|
302 pcs | On Request | 1 | On Request | On Request | 1514+ | On Request | On Request |
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The IS43LR16640A-6BL is a 1Gbit parallel DRAM from Integrated Silicon Solution, designed for mobile applications. It operates with a voltage range of 1.7V to 1.95V and supports a maximum clock frequency of 200 MHz, with a typical operating speed of 166 MHz.
This memory component offers a 1Gbit density organized as 64M x 16 bits. Key electrical specifications include a 5 ns access time and a 15 ns write cycle time. It supports various burst lengths (2, 4, 8) and burst types (sequential & interleave), with a maximum data rate of 400 Mbps/pin.
The device is housed in a 60-TFBGA package, suitable for surface mounting. It operates within an industrial temperature range of 0°C to 70°C (TA). Power saving features such as Partial Array Self Refresh (PASR) and Deep Power Down Mode are included.
Compliance information indicates RoHS3 compliance and an MSL rating of 1 (Unlimited). The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1 Gbit.
64M x 16.
1.7V to 1.95V.
166 MHz (maximum 200 MHz).
60-TFBGA (60-TWBGA, 8x10mm).
0°C to 70°C.
Parallel.