| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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101 pcs
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101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS43DR86400C-3DBLI from Integrated Silicon Solution is a 512Mbit DDR2 DRAM with a parallel memory interface. It operates at a clock frequency of 333 MHz and requires a supply voltage between 1.7V and 1.9V.
This DRAM utilizes a double data rate interface, enabling two data transfers per clock cycle. It supports programmable CAS latency options from 3 to 6 and programmable additive latency from 0 to 5. The memory organization is 64M x 8, with 4 internal banks for concurrent operation.
The device is housed in a 60-TWBGA package and is designed for surface mounting. It operates within a temperature range of -40°C to 85°C (TA). The datasheet specifies various timing parameters, including a write cycle time of 15ns and an access time of 450 ps.
Key features include an on-chip DLL for aligning DQ and DQS transitions with CK, and adjustable data-output drive strength. The product is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512Mbit.
The operating voltage is between 1.7V and 1.9V.
The clock frequency is 333 MHz.
It is supplied in a 60-TWBGA package.
The operating temperature range is -40°C to 85°C (TA).
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.