| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,874 pcs
|
1874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Silicon Solution IS43DR16640C-25DBL is a 1Gb DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module. It utilizes a double data rate interface, enabling two data transfers per clock cycle for high-speed operation. This component features a 4n-prefetch architecture and operates with a voltage range of 1.7V to 1.9V, with a typical Vdd and Vddq of 1.8V.
Key specifications include a memory size of 1Gbit, organized as 64M x 16, and a clock frequency of 400 MHz. The access time is 400 ps, and it supports programmable CAS latency (CL) from 3 to 7, along with programmable additive latency (AL) from 0 to 6. It operates within a commercial temperature range of 0°C to 85°C (TC).
The device is housed in an 84-TWBGA package, designed for surface mounting. It includes features such as an on-chip DLL for aligning DQ and DQS transitions, 8 internal banks for concurrent operation, and adjustable data-output drive strength. The IS43DR16640C-25DBL is suitable for applications requiring high-speed, high-density memory solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1Gbit.
1.8V (Vdd and Vddq).
84-ball WBGA (8mm x 12.5mm) in TWBGA and TFBGA variants.
0°C to 85°C.
400 MHz.
64M x 16.
3, 4, 5, 6, and 7.