IS43DR16640B-3DBLI-TR

The IS43DR16640B-3DBLI-TR is a 1Gbit DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) integrated circuit manufactured by Integrated Silicon Solution, Inc. (ISSI). This component utilizes a parallel interface and is organized as 64M x 16 bits, providing a total storage capacity of 1 Gigabit.

Key electrical specifications include a maximum clock frequency of 400MHz, a supply voltage range of 1.7V to 1.9V (nominal 1.8V), and an access time of 450 ps. It supports programmable CAS Latency from 3 to 7 and Additive Latency from 0 to 6. The memory features 8 internal banks for concurrent operation and a 4-bit prefetch architecture.

This device is available in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package, measuring 8mm x 12.5mm, and is designed for surface mounting. The operating temperature range for the commercial grade is 0°C to 70°C (TA), while industrial grades can operate from -40°C to 85°C (TA). The component also includes features like Power Down Mode, Auto Refresh, Self Refresh, and On-Die Termination (ODT).

This DDR2 SDRAM is suitable for high-speed data applications requiring significant memory capacity and fast access times. Its robust feature set makes it a versatile component for various electronic designs.