| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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130 pcs
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130 pcs | On Request | 1 | On Request | On Request | 14+15+ | On Request | On Request |
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The IS43DR16640B-3DBL from Integrated Silicon Solution is a 1Gb DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) component. It supports clock frequencies up to 400MHz and operates with a voltage range of 1.7V to 1.9V, typically 1.8V.
This memory device features an 8-bank internal architecture and a 4-bit prefetch buffer, enabling concurrent operations and efficient data transfer. It offers programmable CAS Latency options from 3 to 7 and a write latency of Read Latency-1. The component supports programmable burst lengths of 4 and 8, with sequential or interleave burst sequences.
Designed for surface mounting, the IS43DR16640B-3DBL comes in an 84-TFBGA package. Key features include Auto Refresh, Self Refresh modes, Power Down Mode, and On-Die Termination (ODT). The operating temperature range is 0°C to 70°C.
This DDR2 SDRAM is suitable for various applications requiring high-speed memory, such as embedded systems, networking equipment, and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 1.8V with a range of 1.7V to 1.9V.
The part is available in an 84-TFBGA package, also referred to as 84-TWBGA (8x12.5mm).
0°C to 70°C (commercial temperature range).
64M x 16 (1 Gbit).
Programmable CAS latencies of 3, 4, 5, 6, and 7.
Yes, it features ODT (On-Die Termination).
Auto refresh and self refresh with low power option.