| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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208 pcs
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208 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This 1Gb DDR2 SDRAM, part number IS43DR16640B-3DBI-TR, is manufactured by Integrated Silicon Solution. It operates at a clock frequency of up to 333 MHz and requires a voltage of 1.8V ± 0.1V. The memory features a 4-bit prefetch architecture, programmable CAS Latency from 3 to 7, and a burst length of 4 or 8.
Designed for high-speed data transfer, this component offers a memory organization of 64M x 16 and an access time of 450 ps. It supports various operating temperature ranges, including industrial and automotive grades, with a standard operating temperature of -40°C to 85°C (TA).
The IS43DR16640B-3DBI-TR is available in an 84-TWBGA (8x12.5) surface mount package. Key features include ODT (On-Die Termination), Auto Refresh and Self Refresh capabilities, and a Power Down Mode for energy efficiency. This device is suitable for applications requiring high-density, high-performance memory solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.8V ± 0.1V.
84-TWBGA (8x12.5mm) or 84-TFBGA surface mount package.
Industrial: -40°C to 85°C (ambient).
1Gbit.
333MHz (DDR2-667) with a maximum of 400MHz (DDR2-800).
3, 4, 5, 6, and 7.