| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS43DR16640B-25DBLI-TR is a high-performance 1Gb DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) integrated circuit manufactured by Integrated Silicon Solution. This component is organized as 64M x 16 bits and utilizes a parallel interface.
Key electrical specifications include a maximum clock frequency of 400 MHz, an access time of 400 ps, and a supply voltage range of 1.7V to 1.9V. It supports programmable CAS Latency from 3 to 7 and Additive Latency from 0 to 6. The memory features 8 internal banks for concurrent operation and a 4-bit prefetch architecture.
This device is available in a 84-TWBGA (8x12.5) package and is designed for surface mounting. The operating temperature range is -40°C to 85°C (TA). It is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 3.
This DDR2 SDRAM is suitable for various applications requiring high-speed data storage and retrieval, such as in embedded systems, networking equipment, and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.7V to 1.9V.
84-TFBGA and 84-TWBGA (8x12.5) packages.
-40°C to 85°C (TA).
1 Gbit (1Gb).
400 MHz.
64M x 16.
Programmable CAS latency of 3, 4, 5, 6, or 7.