| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS43DR16160B-3DBLI is a 256Mb DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution, Inc. This component features a double data rate interface, enabling two data transfers per clock cycle. It operates with a supply voltage (Vdd) and I/O voltage (Vddq) of 1.8V ±0.1V.
The memory organization is 16M x 16, providing a total capacity of 256Mbit. It supports various CAS latencies (CL) from 3 to 7 and programmable additive latency (AL) from 0 to 6. The device operates at a clock frequency of 333 MHz, with a minimum cycle time of 2.5ns at CL=5.
This DRAM is housed in an 84-TWBGA (8mm x 12.5mm) package, suitable for surface mounting. The operating temperature range is -40°C to 85°C (Ambient Temperature).
Key features include a 4-bit prefetch architecture, on-chip DLL for clock and data strobe alignment, and 4 internal banks for concurrent operation. It also supports programmable burst lengths of 4 or 8, adjustable data-output drive strength, and on-die termination (ODT) options.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the IS43DR16160B-3DBLI is 1.8V.
The IS43DR16160B-3DBLI is available in an 84-TWBGA package.
The operating temperature range is -40°C to 85°C (Ambient Temperature).
The memory size is 256Mbit.
The clock frequency is 333 MHz.
The memory organization is 16M x 16.
Supported CAS Latency values are 3, 4, 5, 6, and 7.