| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,703 pcs
|
3703 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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This Integrated Silicon Solution IS43DR16128B-3DBLI is a 2 Gigabit DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) component. It utilizes a double data rate interface, enabling two data transfers per clock cycle for high-speed operation. The memory is organized as 128M x 16 bits and operates with a nominal supply voltage of 1.8V.
Key electrical specifications include a clock frequency of 333 MHz, an access time of 450 ps, and a write cycle time of 15ns. It supports programmable CAS latency (CL) from 3 to 7 and additive latency (AL) from 0 to 6. The device features 8 internal banks for concurrent operation and a 4-bit prefetch architecture.
The IS43DR16128B-3DBLI is designed for surface mount applications and comes in an 84-TFBGA package with dimensions of 10.5mm x 13.5mm. It operates within an industrial temperature range of -40°C to 85°C (ambient temperature).
This component is suitable for various embedded systems and applications requiring high-density volatile memory. Its DDR2 interface offers improved performance over previous generations, making it a viable option for systems needing efficient data throughput.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the IS43DR16128B-3DBLI is 1.8V, with a range of 1.7V to 1.9V.
The IS43DR16128B-3DBLI is supplied in an 84-TFBGA package.
The operating temperature range for the IS43DR16128B-3DBLI is -40°C to 85°C (ambient temperature).
The IS43DR16128B-3DBLI has a memory size of 2Gbit and is organized as 128M x 16.
The clock frequency for the IS43DR16128B-3DBLI is 333 MHz.
The IS43DR16128B-3DBLI supports programmable CAS Latency (CL) from 3 to 7.