| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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161 pcs
|
161 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The IS42VM16800H-6BLI is a 128Mbit Mobile Synchronous DRAM manufactured by Integrated Silicon Solution. This component is organized as 4 banks of 2,097,152 words x 16 bits, offering fully synchronous operation referenced to the positive edge of the clock.
Key electrical specifications include a clock frequency of 166 MHz and an access time of 5.5 ns. The operating voltage ranges from 1.7V to 1.95V. The technology used is SDRAM - Mobile, with a memory interface that is parallel.
This DRAM is available in a 54-TFBGA package and is designed for surface mount applications. The operating temperature range is -40°C to 85°C (TA). Features include programmable burst length and CAS latency, data mask function, and deep power down mode.
Additional capabilities include auto refresh and self refresh, PASR (Partial Array Self Refresh), and Auto TCSR (Temperature Compensated Self Refresh). The device also supports programmable driver strength control and automatic precharge functions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 128Mbit.
The clock frequency is 166 MHz.
The operating voltage is between 1.7V and 1.95V.
The operating temperature is -40°C to 85°C (TA).
It comes in a 54-TFBGA package.
It is a surface mount device.
The CAS Latency is programmable to 2 or 3 clocks.