| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,264 pcs
|
2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
43 pcs
|
43 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
43 pcs
|
43 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Clock Frequency | |
| Lead Style | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Voltage |
The Integrated Silicon Solution IS42S32800J-6TLI is a 256Mbit Synchronous Dynamic Random-Access Memory (SDRAM) designed for high-speed data transfer. It operates with a single 3.3V power supply and features an LVTTL interface.
Key electrical specifications include a clock frequency of up to 166 MHz and an access time of 5.4 ns. The memory is organized as 8M x 32 bits and supports programmable burst lengths and sequences. It also includes Auto Refresh (CBR) and Self Refresh capabilities, with 4096 refresh cycles required every 16ms for the A2 grade or 64ms for other grades.
This SDRAM is available in an 86-TSOP II package, suitable for surface mount applications. The operating temperature range is -40°C to 85°C, making it suitable for industrial applications. The device is fully synchronous, with all signals referenced to the positive clock edge.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 3.3V to 3.6V.
The device is available in 86-TSOP II and 90-ball TF-BGA packages.
-40°C to +85°C.
256Mbit (8M x 32).
166 MHz at CAS latency 3, and 100 MHz at CAS latency 2.
SDRAM (Synchronous DRAM).
Parallel.