| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,250 pcs
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1250 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 1109+ | On Request | On Request |
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The IS42S32800D-6BL is a high-speed CMOS, 256Mb Synchronous DRAM from Integrated Silicon Solution, Inc. It is designed for 3.3V power supply systems and utilizes a pipeline architecture for high-speed data transfer. All input and output signals are referenced to the rising edge of the clock signal.
Key electrical specifications include a clock frequency of up to 166 MHz with a CAS latency of 3 clocks, and an access time of 5.4 ns. The device supports programmable burst lengths and sequences, auto refresh, and self refresh modes. It is organized internally as a quad-bank DRAM with 4,096 refresh cycles required every 16ms or 64ms depending on the grade.
This component is available in a 90-TFBGA package and is suitable for surface mounting. The operating temperature range for this specific part is 0°C to 70°C.
Designed for applications requiring high-speed memory access, the IS42S32800D-6BL offers a balance of performance and power efficiency for various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 256 Mbit, organized as 8M x 32 bits (also specified as 2M x 32 x 4 banks).
The operating voltage is 3.3V ± 0.3V.
The package is 90-TFBGA (8x13mm) and also available in TSOP-II.
The operating temperature range is commercial grade: 0°C to +70°C.
It supports 166 MHz at CAS Latency 3, 143 MHz at CAS Latency 3, 133 MHz at CAS Latency 2, and 100 MHz at CAS Latency 2.
The device supports CAS Latency 2 and CAS Latency 3.
The memory interface is parallel.