| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,014 pcs
|
2014 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Voltage |
The Integrated Silicon Solution IS42S16800F-6BLI-TR is a high-speed CMOS dynamic random-access memory (DRAM) designed for 3.3V memory systems. This 128Mbit SDRAM is organized as 8M x 16 and utilizes a pipeline architecture for high-speed data transfer, with all input and output signals referenced to the rising edge of the clock input.
Key electrical specifications include a maximum clock frequency of 166 MHz (at CAS Latency 2) and a minimum clock cycle time of 7.5 ns (at CAS Latency 2). The access time from clock is 5.4 ns (at CAS Latency 3). It supports programmable burst lengths (1, 2, 4, 8, full page) and programmable CAS latency (2, 3 clocks).
This component is housed in a 54-TFBGA (8x8) package and is designed for surface mounting. It operates within a temperature range of -40°C to +85°C. The memory interface is parallel, with a 16-bit data bus width. It requires a supply voltage between 3V and 3.6V.
Features such as Auto Refresh (CBR) and Self Refresh are supported. The device is suitable for applications requiring efficient data handling and high-speed memory access.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.0V to 3.6V, with a typical supply of 3.3V.
54-TFBGA (8x8mm) surface mount package.
-40°C to +85°C.
128Mbit (8M x 16).
200 MHz at CAS latency 3, 133 MHz at CAS latency 2.
16-bit parallel interface.
Programmable CAS latency of 2 or 3 clocks.