| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,193 pcs
|
1193 pcs | On Request | 1 | On Request | On Request | 1134+ | On Request | On Request |
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The IS42S16800E-6BLI is a 128Mbit Synchronous DRAM (SDRAM) from Integrated Silicon Solution, Inc. This memory device is designed for high-speed data transfer using a pipeline architecture, with all input and output signals referenced to the rising edge of the clock input.
Key electrical specifications include a maximum clock frequency of 166 MHz (at CAS Latency 3) and an access time of 5.4 ns. It operates with a power supply voltage range of 3V to 3.6V. The memory is organized as 8M x 16 bits and features a parallel interface.
This SDRAM is suitable for applications requiring significant memory capacity and high data throughput. It is housed in a 54-TFBGA (8x8) surface mount package, designed for industrial temperature operation from -40°C to 85°C.
Features include fully synchronous operation, programmable burst length and sequence, Auto Refresh (CBR), Self Refresh, and programmable CAS latency. The device supports burst read/write and burst read/single write operations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IS42S16800E-6BLI has a maximum clock frequency of 166 MHz when CAS Latency is set to 3.
The access time for the IS42S16800E-6BLI is 5.4 ns when CAS Latency is set to 3.
The operating voltage range for this device is 3V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
The IS42S16800E-6BLI is a Synchronous DRAM (SDRAM).
The memory size is 128Mbit.
It is supplied in a 54-TFBGA (8x8) surface mount package.