| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
161 pcs
|
161 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Clock Frequency | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Voltage |
The IS42S16160D-7BLI is a 256Mbit Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution, Inc. This component features a pipeline architecture for high-speed data transfer, with all signal references tied to the rising edge of the clock input.
Key electrical specifications include a clock frequency of up to 143 MHz and an access time of 5.4 ns. It operates from a single 3.3V power supply and supports LVTTL interface. The memory is configurable as 16M x 16 and offers programmable burst lengths and CAS latency.
This device is available in a 54-TFBGA package and is designed for surface mounting. It operates within an industrial temperature range of -40°C to 85°C. The SDRAM includes features such as Auto Refresh (CBR) and Self Refresh capabilities, with 8K refresh cycles required every 16ms for the A2 grade or 64ms for commercial/industrial/A1 grades.
This component is suitable for applications requiring high-speed memory access and data throughput. Its synchronous operation and programmable features allow for efficient integration into various digital systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IS42S16160D-7BLI has a memory size of 256 Mbit.
The nominal operating voltage is 3.3V.
The operating temperature range is -40°C to 85°C.
It is available in a 54-TFBGA package (54-TW-BGA 8x13).
It supports 166 MHz at CAS Latency 3 and 100 MHz at CAS Latency 2.
The memory interface is parallel.