| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,798 pcs
|
2798 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Silicon Solution (ISSI) IS41LV16100B-50TL is a high-performance 16Mbit CMOS Dynamic Random Access Memory (DRAM) device. It utilizes EDO Page Mode technology, enabling rapid access cycles as short as 25 ns per 16-bit word, making it suitable for applications requiring high bandwidth.
Key electrical specifications include a 16Mbit memory size organized as 1M x 16 bits, operating with a single 3.3V ± 10% power supply. The memory type is volatile, and the interface is parallel. It supports EDO Page Mode operations with a minimum cycle time of 40 ns and a minimum read/write cycle time of 85 ns. The device features TTL compatible inputs and outputs with tristate capability.
Designed for demanding applications, this DRAM is ideal for high-bandwidth graphics, digital signal processing, and high-performance computing systems. The operating temperature range is 0°C to 70°C (TA). The IS41LV16100B-50TL is supplied in a 44-TSOP II package, measuring 400 mils wide, and is designed for surface mounting.
Refresh intervals are specified as 1,024 cycles per 16 ms for auto refresh mode and 1,024 cycles per 128 ms for self-refresh mode. The datasheet also mentions lead-free availability.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.3V (3V to 3.6V range).
44-TSOP II (0.400", 10.16mm width) surface mount.
0°C to 70°C.
Yes, the datasheet indicates lead-free availability.
16Mbit.
EDO (Extended Data Out) DRAM.
25 ns max column address access time.