| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,500 pcs
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6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Silicon Solution IS41LV16100B-50KLI-TR is a high-performance CMOS Dynamic Random Access Memory with a capacity of 16Mbit. Organized as 1M x 16, this DRAM utilizes EDO Page Mode technology, allowing for rapid access cycles. It operates with a single 3.3V power supply (±10%) and is compatible with TTL logic levels.
Key electrical specifications include a maximum RAS access time of 50 ns, a maximum CAS access time of 14 ns, and a maximum column address access time of 25 ns. The minimum EDO Page Mode cycle time is 40 ns, and the minimum read/write cycle time is 85 ns. The device supports both auto refresh and self-refresh modes.
Designed for demanding applications, this DRAM is suitable for high-bandwidth graphics, digital signal processing, and high-performance computing systems. It operates within an industrial temperature range of -40°C to +85°C. The component is supplied in a 42-pin SOJ (Small Outline J-Lead) package, designed for surface mounting.
This device offers byte write and byte read operations via two CAS signals. It is available in a lead-free version, aligning with environmental considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
16 Mbit.
3V to 3.6V.
-40°C to +85°C.
42-SOJ (surface mount, 0.400" body width).
Yes, lead-free available.
25 ns maximum.
1M x 16 bits.