| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
485 pcs
|
485 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS41C16256-35K is a high-performance CMOS Dynamic Random Access Memory (DRAM) from Integrated Silicon Solution. This component offers 4-Mbit storage capacity organized as 256K x 16 bits, operating at a 5V supply voltage.
It utilizes EDO Page Mode, enabling accelerated cycle access and allowing for 512 random accesses within a single row. The access cycle time is as short as 10ns per 16-bit word. The device includes Byte Write control for upper and lower bytes, making it suitable for 16 and 32-bit wide data bus systems.
Packaged in a SOJ format with 40 pins, the IS41C16256-35K is designed for applications requiring efficient memory access and data handling. Its specifications make it a viable option for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IS41C16256-35K operates at 5V.
The memory density is 4-Mbit.
The memory is organized as 256K x 16 bits.
The access time is 10ns.
The IS41C16256-35K uses an EDO Page Mode interface.
The package type is SOJ.
The IS41C16256-35K has 40 pins.