| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,004 pcs
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2004 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IS29GL256-70DLET is a 256Mbit Parallel NOR Flash Memory manufactured by Integrated Silicon Solution (ISSI). This memory device features a fast page access time of 20ns and a random access time as fast as 70ns, making it suitable for embedded applications requiring high performance.
It operates from a single power supply with a full voltage range of 2.7V to 3.6V for both read and write operations. The device includes a 32-word/64-byte write buffer that reduces overall programming time for multiple-word updates. The memory organization is 32M x 8 bits, and it supports a parallel interface.
The IS29GL256-70DLET is available in a 64-LFBGA package and operates within an extended temperature range of -40°C to +105°C. It offers a minimum of 100,000 program/erase cycles and 20 years of data retention.
Key features include support for CFI (Common Flash Interface), suspend and resume commands for program and erase operations, and a Ready/Busy# output for detecting cycle completion. The device also has a Secured Silicon Region (SSR) for secure identification.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IS29GL256-70DLET has a memory size of 256 Mbit.
The access time for the IS29GL256-70DLET is 70 ns.
The operating voltage range for the IS29GL256-70DLET is 2.7V to 3.6V.
The operating temperature range is -40°C to 105°C.
The IS29GL256-70DLET is supplied in a 64-LFBGA (9x9) package.
The write cycle time is 200µs.
The data retention is 20 years (TYP).