| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,450 pcs
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5450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRSM005-301MH is a Half-Bridge Intelligent Power Module (IPM) featuring an integrated gate driver, housed in a compact 7x8mm PQFN package. This general-purpose building block is suitable for various low voltage applications where high power density is critical, such as advanced motor drives and DC/DC converters.
Key electrical specifications include a 100V drain-to-source voltage and a maximum DC current of 30A per MOSFET at 25°C. It boasts low on-resistance HEXFETs with a typical value of 16mΩ at 25°C. The module includes undervoltage lockout on Vcc and Vbs, and offers independent gate drive synchronized with the logic input. The gate drive supply range is from 10V to 20V, and it is compatible with 3.3V, 5V, and 15V logic inputs.
The IRSM005-301MH operates with a maximum junction temperature of 150°C and has a storage temperature range of -40°C to 150°C. The package is PQFN 7x8mm, available in trays of 1300 or tape and reel of 2000 units. Its design prioritizes low thermal resistance and minimal parasitics, making it an attractive solution for power-dense designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.68 | $3.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
The continuous drain current is 30A at a case temperature of 25°C.
Typical on-resistance is 16mΩ at 25°C with ID=10A.
The gate drive supply voltage range is 10V to 20V.
Total gate charge is 36nC typical at ID=26A, VDS=20V, VGS=10V.
The device comes in a PQFN 7x8mm package.
The maximum operating junction temperature is 150°C.