| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
152 pcs
|
152 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRS2308SPBF is a high voltage, high speed power MOSFET and IGBT driver. It is designed for half-bridge applications and operates fully to +600 V.
Key electrical specifications include a gate drive supply range from 10 V to 20 V and an internal deadtime of 540 ns. The device is tolerant to negative transient voltage and is dV/dt immune. It supports 3.3 V, 5 V, and 15 V input logic compatibility and features cross-conduction prevention logic.
The IRS2308SPBF is available in an 8-lead SOIC package, suitable for surface mount applications. Its robust design makes it suitable for various power conversion applications requiring efficient high-side and low-side driving.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.03 | $2.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRS2308SPBF is fully operational up to 600 V.
The gate drive supply range is from 10 V to 20 V.
The IRS2308SPBF has an internal deadtime of 540 ns.
The IRS2308SPBF is available in an 8-lead SOIC package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.