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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRS2186SPBF is a high voltage, high speed power MOSFET and IGBT driver. It offers independent high-side and low-side referenced output channels, making it suitable for various power switching applications.
Key electrical specifications include a high-side voltage rating of 600 V, a gate drive supply range of 10 V to 20 V, and output source/sink current capabilities of 4 A / 4 A. The device is designed for bootstrap operation and is tolerant to negative transient voltage, with dV/dt immunity.
This driver is compatible with 3.3 V and 5 V logic inputs and features matched propagation delays for both channels. It is housed in a compact 8-SOIC surface mount package, measuring 0.154 inches (3.90 mm) in width.
The IRS2186SPBF operates across a wide temperature range of -40°C to 150°C (TJ), ensuring reliability in demanding environments. Its design incorporates proprietary HVIC and latch immune CMOS technologies for robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is available in an 8-SOIC (0.154", 3.90mm width) surface-mount package.
It operates over a junction temperature range of -40°C to 150°C.
The high-side voltage rating is 600 V.
The gate drive supply voltage range is 10 V to 20 V.
It provides 4 A source and 4 A sink output current.
The typical propagation delay is 170 ns.
It is designed to drive IGBTs and N-Channel MOSFETs.