| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRS2110SPBF is a high voltage, high speed power MOSFET and IGBT driver. It features independent high-side and low-side referenced output channels, making it suitable for Half-Bridge configurations. The device operates up to 500V with independent channels and provides 2.5A output current for each channel.
Key electrical specifications include a gate drive supply range of 10V to 20V and logic voltage compatibility down to 3.3V. The inputs are non-inverting, and the device supports IGBT and N-Channel MOSFET gate types. It offers matched propagation delays, simplifying use in high-frequency applications.
Packaged in a 16-SOIC (0.295", 7.50mm Width) surface mount package, the IRS2110SPBF is designed for robust operation. It has an operating temperature range of -40°C to 150°C (TJ).
This gate driver is RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 10V to 20V.
The package is a 16-SOIC with 7.50mm width.
The junction temperature range is -40°C to 150°C.
The driven configuration is half-bridge.
It can drive IGBTs and N-Channel MOSFETs.
The driver has two independent channels.
Each channel can deliver 2.5A output current.