| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,524 pcs
|
2524 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The IRS2104STRPBF from Infineon Technologies is a robust half-bridge gate driver designed for driving N-channel MOSFETs and IGBTs. It offers a high-side floating channel operational up to 600V, making it suitable for high-voltage applications. The device tolerates negative transient voltage and is dV/dt immune.
Key electrical specifications include a gate drive supply range of 10V to 20V and output current capabilities of +/- 130mA to +/- 270mA. It supports logic input compatibility down to 3.3V. The driver features internally set deadtime and cross-conduction prevention logic for reliable operation.
Packaged in an 8-SOIC surface-mount configuration, the IRS2104STRPBF operates across a wide temperature range of -40°C to 150°C (TJ). Its design facilitates bootstrap operation for the high-side channel, providing flexibility in power system designs.
This gate driver is ideal for applications requiring efficient switching of power devices in demanding environments. Its features ensure protection against voltage transients and facilitate stable operation in half-bridge configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRS2104STRPBF is offered in an 8-SOIC surface mount package.
-40°C to 150°C (junction temperature).
600 V.
10 V to 20 V.
±130 mA (source/sink) typical, with ±270 mA typical for higher drive.
Turn-on 680 ns, turn-off 150 ns typical.
520 ns typical.