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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | 651 | On Request | On Request |
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The Infineon Technologies IRS2104PBF is a high-voltage, high-speed power MOSFET and IGBT driver. It features dependent high- and low-side referenced output channels, designed for bootstrap operation and fully operational to +600 V. The device is tolerant to negative transient voltage and dV/dt immune.
Key electrical specifications include a gate drive supply range of 10 V to 20 V, with logic input compatibility for 3.3 V, 5 V, and 15 V logic levels. The output drivers provide a current capability of 290mA sourcing and 600mA sinking. It supports a half-bridge driven configuration and has a high side voltage rating of 600 V.
This driver is housed in an 8-DIP (0.300", 7.62mm) package and is designed for through-hole mounting. The operating temperature range is -40°C to 150°C (TJ). It offers features such as undervoltage lockout, cross-conduction prevention logic, and internally set deadtime, making it suitable for various power switching applications.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The part is available under distributor part numbers 2156-IRS2104PBF-ND and IRS2104PBF-ND.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high-side voltage is 600 V.
The operating voltage range is 10 V to 20 V.
The operating temperature range is -40°C to 150°C (junction).
The IRS2104PBF comes in an 8-DIP (0.300", 7.62mm) package, also known as 8-PDIP.
The IRS2104PBF can drive IGBTs and N-Channel MOSFETs.
The output current is 290 mA to 600 mA.
The mounting type is Through Hole.