| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,230 pcs
|
2230 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Tape & Reel | |
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The Infineon Technologies IRS2011SPBF is a high-speed power MOSFET driver featuring independent high and low side referenced output channels. It is designed for bootstrap operation and is fully operational up to 200V, making it suitable for high-side N-channel MOSFET driving.
Key electrical specifications include a gate drive supply range of 10V to 20V and output currents of 1A for both high and low sides. The device boasts a typical propagation delay of 60ns and matched delay times of up to 20ns, which simplifies use in high-frequency applications. Logic inputs are compatible with 3.3V and 5V CMOS or LSTTL outputs.
This gate driver IC is housed in a surface-mount 8-SOIC package. Its operating temperature range is -40°C to 150°C (TJ). The IRS2011SPBF is suitable for applications such as converters and DC motor drives, where robust and efficient power stage control is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high-side voltage is 200V.
The typical output current is 1A for both source and sink.
The typical propagation delay is 60ns.
The operating junction temperature range is -40°C to 150°C.
The IRS2011SPBF is available in an 8-SOIC surface-mount package.
The gate drive supply voltage range is 10V to 20V.
The IRS2011SPBF drives N-channel MOSFETs.