| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,808 pcs
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6808 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRS2011PBF is a high-speed, high-power gate driver designed for driving N-channel MOSFETs in high-side configurations up to 200V. It features independent high and low side output channels, making it suitable for various power conversion applications.
Key electrical specifications include a maximum offset voltage of 200V, typical output current of 1.0A per channel, and a gate drive supply range of 10 to 20V. The device boasts matched propagation delays of up to 20ns and typical turn-on/off times of 60ns, facilitating high-frequency operation.
Logic inputs are compatible with 3.3V and 5V CMOS or LSTTL outputs. The IRS2011PBF incorporates undervoltage lockout for both channels and is tolerant to negative transient voltage with dV/dt immunity.
Available in 8-lead PDIP and 8-lead SOIC packages, this gate driver is designed for applications such as converters and DC motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum offset voltage is 200V.
The typical output current is 1.0A per channel.
The typical turn-on/off time is 60ns.
The maximum delay matching is 20ns.
The IRS2011PBF is available in PDIP8 and SO8N packages.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.