| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon Technologies IRS2001MTRPBF is a high voltage, high speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, designed for bootstrap operation and fully operational to +200V.
Key electrical specifications include a gate drive supply range from 10V to 20V, with output currents of 290mA and 600mA. The device supports logic voltages down to 3.3V and features matched propagation delays for both channels, with a maximum delay matching of 50ns. It operates over a temperature range of -40°C to 150°C (TJ).
This driver is available in a 16-MLPQ (4x4) package and a 16-VFQFN Exposed Pad package, both suitable for surface mounting. The IRS2001MTRPBF is designed for driving N-channel power MOSFETs or IGBTs in a high-side configuration.
Note: The manufacturer's datasheet indicates "Not recommended for new designs. For new designs we recommend IRS2005M".
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply range is from 10V to 20V.
The maximum high-side voltage is 200V.
The typical output currents are 290mA for the high side and 600mA for the low side.
The operating temperature range is -40°C to 150°C (TJ).
The IRS2001MTRPBF is available in a 16-MLPQ (4x4) package and a 16-VFQFN Exposed Pad package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.