| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLZ44NSPBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies, designed for high efficiency switching applications. It features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 47A at 25°C case temperature.
Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 22mOhm at Vgs=10V and Id=25A, and a maximum gate charge (Qg) of 48nC at Vgs=5V. The device has a maximum input capacitance (Ciss) of 1700pF at Vds=25V. The gate threshold voltage (Vgs(th)) is 2V maximum at Id=250µA.
The MOSFET is housed in a TO-263-3 (D²Pak) surface mount package, also known as D2PAK, with three leads and a tab for heat dissipation. It supports an operating junction temperature range of -55°C to 175°C. The device is rated for a maximum power dissipation of 3.8W at ambient temperature and 110W at case temperature.
The maximum drain-to-source voltage (Vdss) is 55V.
The continuous drain current (Id) is 47A at 25°C case temperature.
The maximum drain-source on-resistance (Rds(on)) is 22mOhm at Vgs=10V and Id=25A.
The IRLZ44NSPBF is available in a TO-263-3 (D²Pak) surface mount package, also known as D2PAK.
The operating junction temperature range is -55°C to 175°C.
The maximum gate charge (Qg) is 48nC at Vgs=5V.
The maximum input capacitance (Ciss) is 1700pF at Vds=25V.