| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,760 pcs
|
23760 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
20,270 pcs
|
20270 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLZ44NPBF is an N-Channel MOSFET manufactured by Infineon Technologies. It features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 47A at case temperature (Tc). The device uses MOSFET (Metal Oxide) technology.
With a maximum on-resistance (Rds On) of 22 milliohms at a drain current of 25A and gate-source voltage of 10V, this MOSFET offers efficient switching performance. The maximum gate charge (Qg) is 48 nanocoulombs at a gate-source voltage of 5V, which is relevant for gate drive design.
The IRLZ44NPBF is housed in a TO220AB package, a common through-hole package suitable for power applications. It is designed for use in power switching circuits, motor control, and other applications requiring high current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.80 | $1.80 |
| 10+ | $0.86 | $0.86 |
| 100+ | $0.76 | $0.76 |
| 500+ | $0.60 | $0.60 |
| 1,000+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 55V.
The continuous drain current (Id) is 47A at case temperature (Tc).
The maximum on-resistance (Rds On) is 22 milliohms at a drain current of 25A and gate-source voltage of 10V.
The maximum gate charge (Qg) is 48 nanocoulombs at a gate-source voltage of 5V.