| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 1752+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRLZ34PBF is a third-generation N-channel Power MOSFET from Vishay Siliconix, designed for logic-level gate drive with on-resistance specified at 4V and 5V. It features a 60V drain-source breakdown voltage and continuous drain current rating of 30A at 25°C case temperature. The device offers a maximum on-resistance of 50mΩ at 18A and 5V gate-source voltage, with a gate charge of 35nC at 5V.
This MOSFET is housed in a TO-220AB package, suitable for through-hole mounting and commercial-industrial applications up to 50W dissipation. It is rated for operating junction temperatures from -55°C to 175°C, with a maximum power dissipation of 88W at 25°C case temperature. The device also includes a single pulse avalanche energy rating of 128mJ, providing robustness in inductive switching applications.
Key electrical characteristics include a low gate threshold voltage of 2V maximum, enabling direct drive from low-voltage logic circuits. The input capacitance is 1600pF at 25V drain-source, contributing to moderate switching speeds. The device is RoHS compliant and lead-free, aligned with current environmental regulations.
60V.
TO-220-3 (TO-220AB).
-55°C to 175°C.
Yes, RoHS3 compliant.
4V and 5V for specified on-resistance.