| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Industrial Grade | |
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The IRLZ34 is an N-Channel Power MOSFET from Vishay, designed for logic-level gate drive with specified on-resistance at 4V and 5V. It features a drain-source voltage of 60V and continuous drain current of 30A at 25°C case temperature. The device offers low on-resistance of 50mOhm maximum at Vgs=5V and Id=18A, enabling efficient switching in low-voltage applications.
With a maximum junction temperature of 175°C and power dissipation of 88W at 25°C, the IRLZ34 is suitable for demanding environments. It includes fast switching characteristics, a gate charge of 35nC at 5V, and input capacitance of 1600pF at 25V. The device is avalanche-rated with single pulse avalanche energy of 128mJ.
The IRLZ34 is housed in a TO-220AB (TO-220-3) through-hole package, which offers low thermal resistance and is widely used in commercial-industrial applications up to approximately 50W. The package is RoHS* compliant per the datasheet, though RoHS3 status is unconfirmed.
60V.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C (junction).
The datasheet states RoHS* COMPLIANT for Pb-free suffix, but RoHS3 is unconfirmed.
50mOhm maximum at Vgs=5V, Id=18A.
35nC maximum at Vgs=5V.
30A continuous at Tc=25°C, 21A at Tc=100°C, 110A pulsed.