Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	18A (Tc)
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	480 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs	60mOhm @ 11A, 10V
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2V @ 250µA

IRLZ24NS

IRLZ24NS Specifications Quick View